PART |
Description |
Maker |
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V7785A_04 MGFC39V7785A |
7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V7785A C407785A |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor Sanyo Semicon Device
|
55GN01FA12 ENA1113A 55GN01FA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single SSFP UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor Sanyo Semicon Device
|
PMB2201 |
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz
|
Siemens Semiconductor Group
|